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Magazine Name : Ieee Transactions On Electron Devices

Year : 2003 Volume number : 50 Issue: 06

Investigation Of Electron-Hole Generation In Mos Capacitors On 4h Sic (Article)
Subject: Mos Capacitor , Surface Carrier Generation
Author: Jisheng Han      Sima Dimitrijev      Kuan Yew Cheong     
page:      1433 - 1439
Plasma Display Panel With Ne+N2 Gas-Mixture Discharges (Article)
Subject: Plasma Display Panel , Ultraviolet
Author: Hee Dong Park      Heung-Sik Tae      Kyung Cheol Choi     
page:      1440 - 1444
Mosfet Degradation Kinetics And Its Simulation (Article)
Subject: Mosfet , Reliability
Author: Oleg Penzin      A Haggag      K Hess     
page:      1445 - 1451
An Artificial Fingerprint Device (Afd): A Study Of Identification Number Applications Utilizing Characteristics Variation Of Polycrystalline Silicon Tfts (Article)
Subject: Crystals , Identification
Author: Shigenobu Maeda      Hirotada Kuriyama      Yasuo Inoue     
page:      1451 - 1458
Role Of Scattering In Nanotransistors (Article)
Subject: Mosfets , Leakage Currents
Author: M P Anantram      Alexei Svizhenko     
page:      1459 - 1466
Modeling Of Grain Growth Mechanism By Nickel Silicide Reactive Grain Boundary Effect In Metal-Induced-Lateral-Crystallization (Article)
Subject: Crystallization , Polysilicon
Author: C F Cheng      Mansun Chan      C W Kok     
page:      1467 - 1474
An Analytical Subthreshold Current Model For Pocket-Implanted Nmosfets (Article)
Subject: Modeling , Mosfet
Author: Ching S Ho      Juin J Liou      Kou-Yin Huang     
page:      1475 - 1479
Polycrystalline Silicon---Germanium Emitters For Gain Control, With Application To Sige Hbts (Article)
Subject: Sige , Polysilicon Emitters
Author: V Dominik Kunz      Peter Ashburn      Steven Hall     
page:      1480 - 1486
Reduction Of Parasitic Capacitance In Vertical Mosfets By Spacer Local Oxidation (Article)
Subject: Parasitic Capacitance , Locos Oxidation
Author: V Dominik Kunz      Takashi Uchino      Peter Ashburn     
page:      1487 - 1493
Assessment Of The Performance Of Laser-Based Lateral-Crystallization Technology Via Analysis And Modeling Of Polysilicon Thin-Film-Transistor Mobility (Article)
Subject: Laser Annealing , Tfts
Author: Apostolos T Voutsas     
page:      1494 - 1500
A Unified Rlc Model For High-Speed On-Chip Interconnects (Article)
Subject: Capacitance , Modeling
Author: Sang-Pil Sim      Shoba Krishnan      Cary Y Yang     
page:      1501 - 1510
Quantum Transport In Double-Gate Mosfets With Complex Band Structure (Article)
Subject: Tunneling , Negf
Author: Tongsheng Xia      Leonard F Register      Sanjay K Banerjee     
page:      1511 - 1516
Bias-Temperature Instabilities Of Polysilicon Gate Hfo2 Mosfets (Article)
Subject: Cmosfets , Reliability
Author: Jeong Han      Rino Choi      Renee E Nieh     
page:      1517 - 1524
A Study On The Short-Circuit Capability Of Field-Stop Igbts (Article)
Subject: Insulated Gate Bipolar Transistor
Author: Masahito Otsuki      Yasukazu Seki      Hiroshi Kanemaru     
page:      1525 - 1531
High Performance Bcb-Bridged Algaas/Ingaas Power Hfets (Article)
Subject: Power , Reliability
Author: Ming-Jyh Hwu      Tsung-Jung Yeh      Yi-Jen Chan     
page:      1532 - 1536
Power Combining Characteristics Of Backed-Off Traveling Wave Tubes For Communication Applications (Article)
Subject: Communication Systems , Microwave Amplifiers
Author: Dan M Goebel      Suzanne E Kubasek      Analyn C Schneider     
page:      1537 - 1542
A Floating Well Method For Exact Capacitance-Voltage Measurement Of Nano Technology (Article)
Subject: Floating Well , Ultrathin Oxide
Author: Kuo-Hua Lee      Yuan-Chen Sun      Yee-Chaung See     
page:      1543 - 1544
Channel Width Dependence Of Nmosfet Hot Carrier Degradation (Article)
Subject: Impact Ionization , Channel Width
Author: Erhong Li      Sharad Prasad     
page:      1545 - 1548
Gate Oxide Thickness Dependence Of Edge Charge Trapping In Nmos Transistors Caused By Charge Injection Under Constant-Current Stress (Article)
Subject: Mos Device , Thin Oxide
Author: T P Chen      M S Tse      C H Ang     
page:      1548 - 1550
Diffusion Coefficient Of B In Hfo2 (Article)
Subject: Diffusion , Hfo2
Author: Yoshihiro Sugita      Hiroko Tashiro      Kunihiro Suzuki     
page:      1550 - 1552
Implementation And Characterization Of The Double-Gate Mosfet Using Lateral Solid-Phase Epitaxy (Article)
Subject: Soi , Double-Gate Mosfet
Author: Haitao Liu      Zhibin Xiong      Johnny K O Sin     
page:      1552 - 1555
Submicron Rie Recessed Ingap/Ingaas Doped-Channel Fets (Article)
Subject: Submicron , Power Performance
Author: Yi-Jen Chan      Wen-Kai Wang      Shih-Cheng Yang     
page:      1555 - 1558
Low Pinch-Off Voltage Amorphous Silicon Junction Field-Effect Transistor: Experiment And Simulation (Article)
Subject: Amorphous Materials , Thin Film Transistors
Author: D Caputo      G De Cesare      M Tucci     
page:      1559 - 1561
Dispersion And Gain Investigation Of A Cerenkov Grating Amplifier (Article)
Subject: Electron Beam , Metallic Gratings
Author: Khashayar Mehrany      Bizhan Rashidian     
page:      1562 - 1565